Invention Grant
- Patent Title: Method for manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US13071629Application Date: 2011-03-25
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Publication No.: US08530335B2Publication Date: 2013-09-10
- Inventor: Tomoko Tamura , Eiji Sugiyama , Yoshitaka Dozen , Koji Dairiki , Takuya Tsurume
- Applicant: Tomoko Tamura , Eiji Sugiyama , Yoshitaka Dozen , Koji Dairiki , Takuya Tsurume
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2004-224762 20040730; JP2004-224803 20040730
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/46 ; H01L21/302 ; H01L21/461 ; H01L23/58
Abstract:
A release layer formed over a substrate; at least one of thin film integrated circuits is formed over the release layer; a film is formed over each of the at least one of thin film integrated circuits; and the release layer is removed by using an etchant; thus, the at least one of thin film integrated circuits is peeled from the substrate. A semiconductor device is formed by sealing the peeled thin film integrated circuit by lamination or the like.
Public/Granted literature
- US20110171778A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2011-07-14
Information query
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