Invention Grant
- Patent Title: SiC substrate and method of manufacturing the same
- Patent Title (中): SiC基板及其制造方法
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Application No.: US13152524Application Date: 2011-06-03
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Publication No.: US08530353B2Publication Date: 2013-09-10
- Inventor: Taisuke Hirooka
- Applicant: Taisuke Hirooka
- Applicant Address: JP Tokyo
- Assignee: Hitachi Metals, Ltd.
- Current Assignee: Hitachi Metals, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Keating & Bennett, LLP
- Priority: JP2002-325414 20021108
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461 ; C03C25/68 ; C03C15/00
Abstract:
A method of manufacturing a SiC substrate which has a first principal surface and a second principal surface, includes the step of removing, by a vapor phase etching process, at least a portion of a work-affected layer which is formed by mechanical flattening or cutting on the first principal surface of the SiC substrate.
Public/Granted literature
- US20110237078A1 SiC SUBSTRATE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2011-09-29
Information query
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