Invention Grant
- Patent Title: Substrate processing method
- Patent Title (中): 基板加工方法
-
Application No.: US13415363Application Date: 2012-03-08
-
Publication No.: US08530354B2Publication Date: 2013-09-10
- Inventor: Masato Kushibiki , Eiichi Nishimura
- Applicant: Masato Kushibiki , Eiichi Nishimura
- Applicant Address: JP
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP
- Agency: Cantor Colburn LLP
- Priority: JP2007-265596 20071011; JP2008-105784 20080415
- Main IPC: H01L21/311
- IPC: H01L21/311
Abstract:
The present invention provides a substrate processing method to process a substrate including at least a process layer, an intermediate layer, and a mask layer which are stacked in this order. The mask layer includes an aperture configured to expose a portion of the intermediate layer. The substrate processing method includes a material deposition step of depositing a material on a side surface of the aperture and exposing a portion of the process layer by etching the exposed portion of the intermediate layer by plasma generated from a deposit gas, and an etching step of etching the exposed portion of the process layer.
Public/Granted literature
- US20120196387A1 SUBSTRATE PROCESSING METHOD Public/Granted day:2012-08-02
Information query
IPC分类:
