Invention Grant
- Patent Title: Method of BARC removal in semiconductor device manufacturing
- Patent Title (中): 半导体器件制造中BARC去除的方法
-
Application No.: US13317084Application Date: 2011-10-07
-
Publication No.: US08530356B2Publication Date: 2013-09-10
- Inventor: Roman Gouk , Steven Verhaverbeke , Han-Wen Chen
- Applicant: Roman Gouk , Steven Verhaverbeke , Han-Wen Chen
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agent Shirley L. Church Esq.
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
A method of removing a high molecular weight organic-comprising hard mask or BARC from a surface of a porous low k dielectric material, where a change in the dielectric constant of the low k dielectric material is less than about 5% after application of the method. The method comprises exposing the organic-comprising hard mask or BARC to nitric acid vapor which contains at least 68% by mass HNO3.
Public/Granted literature
- US20130089987A1 Method of barc removal in semiconductor device manufacturing Public/Granted day:2013-04-11
Information query
IPC分类:
