Invention Grant
- Patent Title: Laser irradiation method, laser irradiation apparatus, and method of manufacturing a semiconductor device
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Application No.: US10866802Application Date: 2004-06-15
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Publication No.: US08530788B2Publication Date: 2013-09-10
- Inventor: Koichiro Tanaka , Tomoaki Moriwaka
- Applicant: Koichiro Tanaka , Tomoaki Moriwaka
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2001-327196 20011025; JP2001-327208 20011025
- Main IPC: B23K26/00
- IPC: B23K26/00
Abstract:
In the present invention, each laser light emitted from a plurality of lasers is divided, and laser light including at least one laser light that is emitted from a different laser and that has different energy distribution is synthesized with another such laser light, or laser light including at least one laser light that has different energy distribution is synthesized with another such laser light through a convex lens that is set at an angle to the direction each laser light travels, to form laser light having excellent uniformity in energy distribution.
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