Invention Grant
- Patent Title: Solid-state imaging device with a planarized lens layer method of manufacturing the same, and electronic apparatus
- Patent Title (中): 具有平面化透镜层制造方法的固态成像装置和电子装置
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Application No.: US12728464Application Date: 2010-03-22
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Publication No.: US08530814B2Publication Date: 2013-09-10
- Inventor: Hiromi Wano , Atsushi Toda , Yoichi Otsuka , Atsushi Yamamoto
- Applicant: Hiromi Wano , Atsushi Toda , Yoichi Otsuka , Atsushi Yamamoto
- Applicant Address: JP
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP
- Agency: Sheridan Ross P.C.
- Priority: JP2009-088097 20090331
- Main IPC: H01L27/00
- IPC: H01L27/00 ; H01L31/0232
Abstract:
A solid-state imaging device includes a light sensing portion which is formed on a substrate and generates a signal electric charge according to incident light; a rectangular or gradient-index on-chip micro lens formed on a light incident side above the light sensing portion; and a planarized lens layer which covers the on-chip micro lens and is formed in such a manner that a light incident surface is planarized.
Public/Granted literature
- US20100243869A1 SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS Public/Granted day:2010-09-30
Information query
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