Invention Grant
US08530841B2 Infrared sensor, electronic device, and manufacturing method of infrared sensor
有权
红外线传感器，电子设备及红外线传感器的制造方法
- Patent Title: Infrared sensor, electronic device, and manufacturing method of infrared sensor
- Patent Title (中): 红外线传感器，电子设备及红外线传感器的制造方法
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Application No.: US13256704Application Date: 2010-04-05
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Publication No.: US08530841B2Publication Date: 2013-09-10
- Inventor: Masatake Takahashi , Yasuhiro Sasaki , Hiroshi Sakai
- Applicant: Masatake Takahashi , Yasuhiro Sasaki , Hiroshi Sakai
- Applicant Address: JP Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JP Tokyo
- Priority: JP2009-120127 20090518
- International Application: PCT/JP2010/002494 WO 20100405
- International Announcement: WO2010/134255 WO 20101125
- Main IPC: H01L37/00
- IPC: H01L37/00 ; G01J5/00
Abstract:
The present invention aims to reduce a size and improve quality of an infrared sensor. An infrared sensor (203) according to the present invention includes a substrate (202) and an infrared detection element (201). A principal surface of the substrate (202) includes a convex shape. The infrared detection element (201) is formed over the principal surface including the convex shape of the substrate (202). Further, as for the infrared detection element (201), an entire light-receiving surface includes a planar shape. Then, it can be the small-sized infrared sensor (203) with improved quality.
Public/Granted literature
- US20120049067A1 INFRARED SENSOR, ELECTRONIC DEVICE, AND MANUFACTURING METHOD OF INFRARED SENSOR Public/Granted day:2012-03-01
Information query
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