Invention Grant
- Patent Title: Pattern observation method
- Patent Title (中): 模式观察法
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Application No.: US12709264Application Date: 2010-02-19
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Publication No.: US08530866B2Publication Date: 2013-09-10
- Inventor: Hideaki Abe
- Applicant: Hideaki Abe
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2009-167793 20090716
- Main IPC: G21K5/04
- IPC: G21K5/04

Abstract:
The pattern observation method for observing a pattern which is formed on an insulating film, includes: irradiating an entirety of the pattern with a charged particle beam, to obtain a temporary image of the pattern which has region information of a convex pattern and a concave pattern; irradiating the convex and concave patterns with the charged particle beam having a first and second voltages based on the region information, to thereby form an electric field between a top surface of the convex pattern and a bottom surface of the concave pattern so that charged particles emitted from the bottom surface of the concave pattern may be drawn out to an outside of the pattern; and irradiating the entirety of the pattern with the charged particle beam to obtain an image of the pattern having the information of the bottom surface of the concave pattern.
Public/Granted literature
- US20110012029A1 PATTERN OBSERVATION METHOD Public/Granted day:2011-01-20
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