Invention Grant
- Patent Title: Reconfigurable multilayer circuit
- Patent Title (中): 可重构多层电路
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Application No.: US13259168Application Date: 2009-07-27
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Publication No.: US08530880B2Publication Date: 2013-09-10
- Inventor: Dmitri Borisovich Strukov , R. Stanley Williams , Yevgeniy Eugene Shteyn
- Applicant: Dmitri Borisovich Strukov , R. Stanley Williams , Yevgeniy Eugene Shteyn
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- International Application: PCT/US2009/051835 WO 20090727
- International Announcement: WO2011/014156 WO 20110203
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H03K19/177 ; H03K25/00 ; H03K19/173
Abstract:
A reconfigurable multilayer circuit (400) includes a complimentary metal-oxide-semiconductor (CMOS) layer (210) having control circuitry, logic gates (515), and at least two crossbar arrays (205, 420) which overlie the CMOS layer (210). The at least two crossbar arrays (205, 420) are configured by the control circuitry and form reconfigurable interconnections between the logic gates (515) within the CMOS layer (210).
Public/Granted literature
- US20120007038A1 Reconfigurable Multilayer Circuit Public/Granted day:2012-01-12
Information query
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