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US08530917B2 Optical semiconductor device having air gap forming reflective mirror and its manufacturing method 有权
具有气隙形成反射镜的光学半导体器件及其制造方法

Optical semiconductor device having air gap forming reflective mirror and its manufacturing method
Abstract:
In an optical semiconductor device including an epitaxially-grown light emitting semiconductor layer and a reflective electrode layer provided at a counter face of the light emitting semiconductor layer opposing a light extracting face thereof, a support electrode layer is provided between the reflective electrode layer and the counter face of the light emitting semiconductor layer and is adapted to support the light emitting semiconductor layer and electrically connect the light emitting semiconductor layer to the reflective electrode layer. Also, a total area of the support electrode layer is smaller than an area of the reflective electrode layer. Further, an air gap at a periphery of the support electrode layer and the reflective electrode layer serves as a reflective mirror.
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