Invention Grant
- Patent Title: High voltage low current surface emitting LED
- Patent Title (中): 高压低电流表面发光LED
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Application No.: US13190126Application Date: 2011-07-25
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Publication No.: US08530921B2Publication Date: 2013-09-10
- Inventor: James Ibbetson , Sten Heikman
- Applicant: James Ibbetson , Sten Heikman
- Applicant Address: US CA Goleta
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US CA Goleta
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
A monolithic LED chip is disclosed comprising a plurality of junctions or sub-LEDs (“sub-LEDs”) mounted on a submount. The sub-LEDs are serially interconnected such that the voltage necessary to drive the sub-LEDs is dependent on the number of serially interconnected sub-LEDs and the junction voltage of the sub-LEDs. Methods for fabricating a monolithic LED chip are also disclosed with one method comprising providing a single junction LED on a submount and separating the single junction LED into a plurality of sub-LEDs. The sub-LEDs are then serially interconnected such that the voltage necessary to drive the sub-LEDs is dependent on the number of the serially interconnected sub-LEDs and the junction voltage of the sub-LEDs.
Public/Granted literature
- US20110278608A1 High Voltage Low Current Surface Emitting LED Public/Granted day:2011-11-17
Information query
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