Invention Grant
- Patent Title: Solid-state image sensor
- Patent Title (中): 固态图像传感器
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Application No.: US13382878Application Date: 2010-06-23
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Publication No.: US08530947B2Publication Date: 2013-09-10
- Inventor: Yasushi Kondo , Hideki Tominaga , Kenji Takubo , Ryuta Hirose , Shigetoshi Sugawa , Hideki Mutoh
- Applicant: Yasushi Kondo , Hideki Tominaga , Kenji Takubo , Ryuta Hirose , Shigetoshi Sugawa , Hideki Mutoh
- Applicant Address: JP Kyoto JP Miyagi
- Assignee: Shimadzu Corporation,Tohoku University
- Current Assignee: Shimadzu Corporation,Tohoku University
- Current Assignee Address: JP Kyoto JP Miyagi
- Agency: Bingham McCutchen LLP
- Priority: JP2009-163397 20090710
- International Application: PCT/JP2010/060661 WO 20100623
- International Announcement: WO2011/004708 WO 20110113
- Main IPC: H01L27/148
- IPC: H01L27/148

Abstract:
A floating diffusion region is formed at an edge of a light-receiving surface of an embedded photodiode, with a transfer gate electrode located therebetween. A first region, with radially extending portions centered on the FD region, and a second region, located to the outside of the first region, are created in the substantially sector-shaped light-receiving surface. A dopant whose conductivity type is the same as the signal charges to be collected in the first region are introduced, whereby an electric field for moving the signal charges from the radially extending sections towards the center is created due to a three-dimensional field effect. As a result, the charge-transfer time is reduced. Additionally, since a circuit element in the subsequent stage can be placed adjacent to the floating diffusion region, the parasitic capacitance of the floating diffusion region can be reduced and a highly sensitive element can be obtained.
Public/Granted literature
- US20120112255A1 Solid-State Image Sensor Public/Granted day:2012-05-10
Information query
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