Invention Grant
US08530951B2 Scalable multi-functional and multi-level nano-crystal non-volatile memory device
有权
可扩展的多功能和多级纳米晶体非易失性存储器件
- Patent Title: Scalable multi-functional and multi-level nano-crystal non-volatile memory device
- Patent Title (中): 可扩展的多功能和多级纳米晶体非易失性存储器件
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Application No.: US13608483Application Date: 2012-09-10
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Publication No.: US08530951B2Publication Date: 2013-09-10
- Inventor: Arup Bhattacharyya
- Applicant: Arup Bhattacharyya
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Leffert Jay & Polglaze, P.A.
- Main IPC: H01L29/76
- IPC: H01L29/76 ; G11C16/04
Abstract:
A multi-functional and multi-level memory cell comprises a tunnel layer formed over a substrate. In one embodiment, the tunnel layer comprises two layers such as HfO2 and LaAlO3. A charge blocking layer is formed over the tunnel layer. In one embodiment, this layer is formed from HfSiON. A control gate is formed over the charge blocking layer. A discrete trapping layer is embedded in either the tunnel layer or the charge blocking layer, depending on the desired level of non-volatility. The closer the discrete trapping layer is formed to the substrate/insulator interface, the lower the non-volatility of the device. The discrete trapping layer is formed from nano-crystals having a uniform size and distribution.
Public/Granted literature
- US20130003456A1 SCALABLE MULTI-FUNCTIONAL AND MULTI-LEVEL NANO-CRYSTAL NON-VOLATILE MEMORY DEVICE Public/Granted day:2013-01-03
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