Invention Grant
US08530972B2 Double gate MOSFET with coplanar surfaces for contacting source, drain, and bottom gate
有权
双栅极MOSFET，具有用于接触源极，漏极和底栅极的共面
- Patent Title: Double gate MOSFET with coplanar surfaces for contacting source, drain, and bottom gate
- Patent Title (中): 双栅极MOSFET，具有用于接触源极，漏极和底栅极的共面
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Application No.: US12717281Application Date: 2010-03-04
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Publication No.: US08530972B2Publication Date: 2013-09-10
- Inventor: Jay P. John , Thuy B. Dao
- Applicant: Jay P. John , Thuy B. Dao
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agency: Jackson Walker L.L.P.
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A method is provided for making a semiconductor device, which comprises (a) providing a semiconductor structure comprising a top gate (228) and a bottom gate (240); (b) creating first (251), second and third (252) openings in the semiconductor structure, wherein the first opening exposes a portion of the bottom gate; (c) filling the first, second and third openings with a conductive material, thereby forming source (258) and drain (260) regions in the second and third openings and a conductive region (253) in the first opening; and (d) forming an electrical contact (278) to the conductive region.
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