Invention Grant
US08530998B2 Substrate compositions and methods for forming semiconductor on insulator devices
有权
用于形成半导体绝缘体器件的衬底组合物和方法
- Patent Title: Substrate compositions and methods for forming semiconductor on insulator devices
- Patent Title (中): 用于形成半导体绝缘体器件的衬底组合物和方法
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Application No.: US12682842Application Date: 2008-10-28
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Publication No.: US08530998B2Publication Date: 2013-09-10
- Inventor: Kishor Purushottam Gadkaree , Matthew John Dejneka , Adam James Ellison
- Applicant: Kishor Purushottam Gadkaree , Matthew John Dejneka , Adam James Ellison
- Applicant Address: US NY Corning
- Assignee: Corning Incorporated
- Current Assignee: Corning Incorporated
- Current Assignee Address: US NY Corning
- Agent Ryan T. Hardee
- International Application: PCT/US2008/012192 WO 20081028
- International Announcement: WO2009/058245 WO 20090507
- Main IPC: H01L29/02
- IPC: H01L29/02
Abstract:
Methods and apparatus for producing a semiconductor on insulator structure include: subjecting an implantation surface of a donor single crystal semiconductor wafer to an ion implantation process to create an exfoliation layer of the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a glass substrate using electrolysis, wherein a liquidus viscosity of the glass substrate is about 100,000 Poise or greater.
Public/Granted literature
- US20100224954A1 SUBSTRATE COMPOSITIONS AND METHODS FOR FORMING SEMICONDUCTOR ON INSULATOR DEVICES Public/Granted day:2010-09-09
Information query
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