Invention Grant
- Patent Title: Thermally enhanced structure for multi-chip device
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Application No.: US13224487Application Date: 2011-09-02
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Publication No.: US08531032B2Publication Date: 2013-09-10
- Inventor: Chen-Hua Yu , Chih-Hang Tung , Tung-Liang Shao
- Applicant: Chen-Hua Yu , Chih-Hang Tung , Tung-Liang Shao
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/498
- IPC: H01L23/498

Abstract:
A multi-chip semiconductor device comprises a thermally enhanced structure, a first semiconductor chip, a second semiconductor chip, an encapsulation layer formed on top of the first semiconductor chip and the second semiconductor chip. The multi-chip semiconductor device further comprises a plurality of thermal vias formed in the encapsulation layer. The thermally enhanced structure comprises a heat sink block attached to a first semiconductor die. The heat sink block may further comprise a variety of thermal vias and thermal openings. By employing the thermal enhanced structure, the thermal performance of the multi-chip semiconductor device can be improved.
Public/Granted literature
- US20130056871A1 Thermally Enhanced Structure for Multi-Chip Device Public/Granted day:2013-03-07
Information query
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