Invention Grant
US08531033B2 Contact plug structure, semiconductor device, and method for forming contact plug
失效
接触插塞结构，半导体器件和形成接触插塞的方法
- Patent Title: Contact plug structure, semiconductor device, and method for forming contact plug
- Patent Title (中): 接触插塞结构，半导体器件和形成接触插塞的方法
-
Application No.: US12807528Application Date: 2010-09-07
-
Publication No.: US08531033B2Publication Date: 2013-09-10
- Inventor: Junichi Koike , Akihiro Shibatomi , Kouji Neishi
- Applicant: Junichi Koike , Akihiro Shibatomi , Kouji Neishi
- Applicant Address: JP Miyagi
- Assignee: Advanced Interconnect Materials, LLC
- Current Assignee: Advanced Interconnect Materials, LLC
- Current Assignee Address: JP Miyagi
- Agency: Sughrue Mion, PLLC
- Priority: JP2009-205748 20090907; JP2010-030976 20100216
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L21/768
Abstract:
A contact plug structure formed on a contact hole of an insulating layer of a semiconductor device includes a metal silicide layer formed on a bottom part of the contact hole of the insulating layer, a manganese oxide layer formed on the metal silicide layer in the contact hole, and a buried copper formed on the manganese oxide layer which substantially fills the contact hole.
Public/Granted literature
- US20110057317A1 Contact plug structure, semiconductor device, and method for forming contact plug Public/Granted day:2011-03-10
Information query
IPC分类:
