Invention Grant
- Patent Title: Semiconductor component having a plated through-hole and method for the production thereof
- Patent Title (中): 具有电镀通孔的半导体元件及其制造方法
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Application No.: US13501399Application Date: 2010-09-22
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Publication No.: US08531041B2Publication Date: 2013-09-10
- Inventor: Franz Schrank
- Applicant: Franz Schrank
- Applicant Address: AT Unterpremstaetten
- Assignee: AMS AG
- Current Assignee: AMS AG
- Current Assignee Address: AT Unterpremstaetten
- Agency: McDermott Will & Emery LLP
- Priority: DE102009049102 20091013
- International Application: PCT/EP2010/063985 WO 20100922
- International Announcement: WO2011/045153 WO 20110421
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
A connection contact layer (4) is disposed between semiconductor bodies (1,2). In the second semiconductor body (2), a recess is provided. A connection layer (7) on the top face extends as far as the recess, in which a metallization (10) is present that conductively connects the connection contact layer (4) to the connection layer (7) in an electrical manner. A polymer (8) or a further metallization is present in the recess.
Public/Granted literature
- US20120280392A1 Semiconductor Component Havin a Plated Through-Hole and method for the Production Thereof Public/Granted day:2012-11-08
Information query
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