Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13037993Application Date: 2011-03-01
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Publication No.: US08531170B2Publication Date: 2013-09-10
- Inventor: Ikuo Fukami , Masaji Nakano
- Applicant: Ikuo Fukami , Masaji Nakano
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Sughrue Mion, PLLC
- Priority: JP2010-045583 20100302
- Main IPC: G05F3/16
- IPC: G05F3/16

Abstract:
A semiconductor device of the present invention includes an output transistor connected between a power supply terminal and an output terminal; a detection transistor generating a detection current that is proportional to a current flowing through the output transistor; a detection voltage generation unit generating a detection voltage based on a detection current; a protection transistor drawing a current from a control terminal of the output transistor to the output terminal according to the detection voltage; and a limited current generation circuit that generates a limited current that is obtained by converting a limit setting current that sets a current flowing through the output transistor in a protection state according to a variation of a threshold voltage of the protection transistor and a variation of the detection voltage with respect to the detection current, and supplies the limited current to a first terminal of the protection transistor.
Public/Granted literature
- US20110215783A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-09-08
Information query
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