Invention Grant
US08531199B2 Method for testing through-silicon-via and the circuit thereof 有权
硅通孔测试方法及其电路

Method for testing through-silicon-via and the circuit thereof
Abstract:
The method and circuit for testing a TSV of the present invention exploit the electronic property of the TSV under test. The TSV under test is first reset to a first state, and is then sensed at only one end to determine whether the TSV under test follows the behavior of a normal TSV, wherein the reset and sense steps are performed at only one end of the TSV under test. If the TSV under test does not follow the behavior of a normal TSV, the TSV under test is determined faulty.
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