Invention Grant
- Patent Title: Method for testing through-silicon-via and the circuit thereof
- Patent Title (中): 硅通孔测试方法及其电路
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Application No.: US12775367Application Date: 2010-05-06
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Publication No.: US08531199B2Publication Date: 2013-09-10
- Inventor: Cheng Wen Wu , Po Yuan Chen , Ding Ming Kwai , Yung Fa Chou
- Applicant: Cheng Wen Wu , Po Yuan Chen , Ding Ming Kwai , Yung Fa Chou
- Applicant Address: TW Hsinchu
- Assignee: National Tsing Hua University
- Current Assignee: National Tsing Hua University
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C.
- Agent Anthony King
- Main IPC: G01R31/02
- IPC: G01R31/02 ; G01R31/26

Abstract:
The method and circuit for testing a TSV of the present invention exploit the electronic property of the TSV under test. The TSV under test is first reset to a first state, and is then sensed at only one end to determine whether the TSV under test follows the behavior of a normal TSV, wherein the reset and sense steps are performed at only one end of the TSV under test. If the TSV under test does not follow the behavior of a normal TSV, the TSV under test is determined faulty.
Public/Granted literature
- US20110080185A1 METHOD FOR TESTING THROUGH-SILICON-VIA AND THE CIRCUIT THEREOF Public/Granted day:2011-04-07
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