Invention Grant
- Patent Title: Method and apparatus for testing a semiconductor device
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Application No.: US13183962Application Date: 2011-07-15
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Publication No.: US08531201B2Publication Date: 2013-09-10
- Inventor: Jhih-Jie Shao , Szu-Chia Huang , Tang-Hsuan Chung , Huan Chi Tseng
- Applicant: Jhih-Jie Shao , Szu-Chia Huang , Tang-Hsuan Chung , Huan Chi Tseng
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G01R31/02
- IPC: G01R31/02 ; G01R27/28

Abstract:
The present disclosure provides a method for testing a semiconductor device. The method includes providing a testing unit and an electronic circuit coupled to the testing unit and applying a first electrical signal to the testing unit. The method includes sweeping a second electrical signal across a range of values, the second electrical signal supplying power to the electronic circuit, wherein the sweeping is performed while a value of the first electrical signal remains the same. The method includes measuring a third electrical signal during the sweeping, the measured third electrical signal having a range of values that each correspond to one of the values of the second electrical signal. The method includes adopting an optimum value of the second electrical signal that yields a minimum value of the third electrical signal. The method includes testing the testing unit while the second electrical signal is set to the optimum value.
Public/Granted literature
- US20130015877A1 METHOD AND APPARATUS FOR TESTING A SEMICONDUCTOR DEVICE Public/Granted day:2013-01-17
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