Invention Grant
- Patent Title: Monolithic high-side switch control circuits
- Patent Title (中): 单片式高边开关控制电路
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Application No.: US13366742Application Date: 2012-02-06
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Publication No.: US08531210B2Publication Date: 2013-09-10
- Inventor: Ta-Yung Yang
- Applicant: Ta-Yung Yang
- Applicant Address: TW New Taipei
- Assignee: System General Corporation
- Current Assignee: System General Corporation
- Current Assignee Address: TW New Taipei
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H03B1/00
- IPC: H03B1/00 ; H03K3/00

Abstract:
A high-side switch control circuit is provided. The high-side switch control circuit includes an on/off transistor, a bias resistor, a zener diode, a level-shifting transistor, and a current source. The on/off transistor operates as a switch. The bias resistor is coupled to turn off the on/off transistor. The zener diode is coupled to clamp the maximum voltage of the on/off transistor. The level-shifting transistor is coupled to turn on the on/off transistor. The current source is coupled to the level-shifting transistor. The current source limits the maximum current of the level-shifting transistor.
Public/Granted literature
- US20130049812A1 MONOLITHIC HIGH-SIDE SWITCH CONTROL CIRCUITS Public/Granted day:2013-02-28
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