Invention Grant
- Patent Title: Switching circuit including nitride semiconductor devices
- Patent Title (中): 包括氮化物半导体器件的开关电路
-
Application No.: US13437316Application Date: 2012-04-02
-
Publication No.: US08531233B2Publication Date: 2013-09-10
- Inventor: Yasushi Tasaka
- Applicant: Yasushi Tasaka
- Applicant Address: JP Niiza-shi
- Assignee: Sanken Electric Co., Ltd.
- Current Assignee: Sanken Electric Co., Ltd.
- Current Assignee Address: JP Niiza-shi
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-082650 20110404
- Main IPC: H03K17/687
- IPC: H03K17/687
Abstract:
A switching circuit includes a switching device including the first and second main electrodes and a control electrode; and a driver including: a first rectifying device having an anode terminal connected to the first main electrode of the switching device; a first driving device having a first main electrode connected to a cathode terminal of the first rectifying device and a second main electrode connected to the control electrode of the switching device; a second driving device having a first main electrode connected to the control electrode of the switching device and a second main electrode connected to the second main electrode of the switching device; and input terminals receiving control signals inputted to a control electrode of the first driving device and a control electrode of the second driving device.
Public/Granted literature
- US20120248565A1 SWITCHING CIRCUIT INCLUDING NITRIDE SEMICONDUCTOR DEVICES Public/Granted day:2012-10-04
Information query
IPC分类:
