Invention Grant
- Patent Title: Capacitive element, manufacturing method of the same, solid-state imaging device, and imaging apparatus
- Patent Title (中): 电容元件，其制造方法，固态成像装置和成像装置
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Application No.: US12661760Application Date: 2010-03-23
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Publication No.: US08531564B2Publication Date: 2013-09-10
- Inventor: Yoshiki Ebiko
- Applicant: Yoshiki Ebiko
- Applicant Address: JP
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP
- Agency: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- Priority: JPP2009-086669 20090331
- Main IPC: H04N3/14
- IPC: H04N3/14
Abstract:
A capacitive element, includes: an active region parted by an element isolation region formed in a semiconductor substrate; a first electrode formed of a diffusion layer in the active region; an insulating layer formed on the first electrode; and a second electrode formed on a planar surface of the first electrode via the insulating layer, wherein the second electrode is formed within the active region and within the first electrode in a planar layout.
Public/Granted literature
- US20100253822A1 Capacitive element, manufacturing method of the same, solid-state imaging device, and imaging apparatus Public/Granted day:2010-10-07
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