Invention Grant
US08531565B2 Front side implanted guard ring structure for backside illuminated image sensor
有权
背面照明图像传感器的前侧植入保护环结构
- Patent Title: Front side implanted guard ring structure for backside illuminated image sensor
- Patent Title (中): 背面照明图像传感器的前侧植入保护环结构
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Application No.: US12710862Application Date: 2010-02-23
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Publication No.: US08531565B2Publication Date: 2013-09-10
- Inventor: Wen-De Wang , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Jeng-Shyan Lin
- Applicant: Wen-De Wang , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Jeng-Shyan Lin
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hautman & Ham, LLP
- Main IPC: H04N5/335
- IPC: H04N5/335 ; H04N5/217
Abstract:
An image sensor includes a semiconductor substrate, a guard ring structure in the substrate, and at least one pixel surrounded by the guard ring structure. The guard ring structure is implanted in the substrate by high-energy implantation.
Public/Granted literature
- US20100220226A1 FRONT SIDE IMPLANTED GUARD RING STRUCTURE FOR BACKSIDE ILLUMINATED IMAGE SENSOR Public/Granted day:2010-09-02
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