中科微点-全球专利检索

  1. Login
  2. Sign Up
Invention Grant
US08531759B2 Dielectric microstructure for use in microelectromechanical systems and method of forming same 有权
用于微机电系统的介电微结构及其形成方法

  • Patent Title: Dielectric microstructure for use in microelectromechanical systems and method of forming same
  • Patent Title (中): 用于微机电系统的介电微结构及其形成方法
  • Application No.: US12344526
    Application Date: 2008-12-28
  • Publication No.: US08531759B2
    Publication Date: 2013-09-10
  • Inventor: Larry Joseph Hombeck
  • Applicant: Larry Joseph Hombeck
  • Applicant Address: US TX Dallas
  • Assignee: Texas Instruments Incorporated
  • Current Assignee: Texas Instruments Incorporated
  • Current Assignee Address: US TX Dallas
  • Agent Warren L. Franz; Wade J. Brady, III; Frederick J. Telecky, Jr.
  • Main IPC: G02B26/08
  • IPC: G02B26/08
Dielectric microstructure for use in microelectromechanical systems and method of forming same
Abstract:
Disclosed herein is a dielectric microstructure with a substantially unit dielectric constant K for use in microelectromechanical systems.
Abstract(Chinese):

本文公开了具有用于微机电系统的基本单位介电常数K的电介质微结构。

Public/Granted literature
Information query
Espacenet
Patent Agency Ranking
0/0