Invention Grant
- Patent Title: Semiconductor wavelength converting devices and light sources for generating infrared rays
- Patent Title (中): 用于产生红外线的半导体波长转换装置和光源
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Application No.: US13713132Application Date: 2012-12-13
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Publication No.: US08531760B2Publication Date: 2013-09-10
- Inventor: Jungo Kondo , Yuichi Iwata , Tetsuya Ejiri
- Applicant: NGK Insulators, Ltd.
- Applicant Address: JP Aichi-prefecture
- Assignee: NGK Insulators, Ltd.
- Current Assignee: NGK Insulators, Ltd.
- Current Assignee Address: JP Aichi-prefecture
- Agency: Cermak Nakajima LLP
- Agent Tomoko Nakajima
- Priority: JP2011-276962 20111219
- Main IPC: G02F1/35
- IPC: G02F1/35 ; G02F2/02

Abstract:
It is provided a wavelength converting device oscillating an idler light having a wavelength of 5 to 10 μm from a pump light. The wavelength of the idler light is longer than that of the pump light. The wavelength converting device includes a wavelength converting layer 5 of a semiconductor non-linear optical crystal and having a thickness of 50 μm or smaller. The wavelength converting layer 5 includes a crystal orientation inversion structure wherein crystal orientation of the optical crystal is inverted at a predetermined period and at least one flat main face 5b. The device further includes a Peltier device 2 controlling a temperature of the wavelength converting layer 5; and a clad portion 4 joined with the flat main face 5b of the wavelength converting layer 5 and provided between the wavelength converting layer 5 and the Peltier device 2. The pump light, idler light and signal light satisfies a particular phase matching condition.
Public/Granted literature
- US20130156062A1 Semiconductor Wavelength Converting Devices and Light Sources for Generating Infrared Rays Public/Granted day:2013-06-20
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