Invention Grant
US08531864B2 Nonvolatile semiconductor integrated circuit for controlling sensing voltage
有权
用于控制感测电压的非易失性半导体集成电路
- Patent Title: Nonvolatile semiconductor integrated circuit for controlling sensing voltage
- Patent Title (中): 用于控制感测电压的非易失性半导体集成电路
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Application No.: US12844637Application Date: 2010-07-27
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Publication No.: US08531864B2Publication Date: 2013-09-10
- Inventor: Dong Keun Kim
- Applicant: Dong Keun Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Patent Ltd.
- Priority: KR10-2009-0130725 20091224
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A nonvolatile semiconductor integrated circuit includes a memory cell array configured to include each of memory cells having a variable resistor; a current sensing unit configured to convert a current which depends on the variable resistor of a corresponding memory cell, into a sensing voltage; and a voltage control unit configured to receive the sensing voltage for a predetermined time in response to a sensing control signal, regulate the received sensing voltage, and provide a sensing output voltage.
Public/Granted literature
- US20110157957A1 NONVOLATILE SEMICONDUCTOR INTEGRATED CIRCUIT FOR CONTROLLING SENSING VOLTAGE Public/Granted day:2011-06-30
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