Invention Grant
- Patent Title: Nonvolatile memories and reconfigurable circuits
- Patent Title (中): 非易失性存储器和可重新配置电路
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Application No.: US13213871Application Date: 2011-08-19
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Publication No.: US08531866B2Publication Date: 2013-09-10
- Inventor: Kazutaka Ikegami , Atsuhiro Kinoshita , Daisuke Hagishima
- Applicant: Kazutaka Ikegami , Atsuhiro Kinoshita , Daisuke Hagishima
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-68124 20090319
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
A nonvolatile memory according to an embodiment includes at least one memory cell including: a variable resistance memory comprising one end connected to a first terminal, and the other end connected to a second terminal, a drive voltage being applied to the first terminal; and a diode comprising a cathode connected to the second terminal, and an anode connected to a third terminal, a ground potential being applied to the third terminal. An output of the memory cell is output from the second terminal, the output of the memory cell depends on a resistance state of the variable resistance memory.
Public/Granted literature
- US20120026779A1 NONVOLATILE MEMORIES AND RECONFIGURABLE CIRCUITS Public/Granted day:2012-02-02
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