Invention Grant
US08531867B2 Conductive filament based memory elements and methods with improved data retention and/or endurance
失效
基于导电丝的记忆元素和具有改进的数据保留和/或耐久性的方法
- Patent Title: Conductive filament based memory elements and methods with improved data retention and/or endurance
- Patent Title (中): 基于导电丝的记忆元素和具有改进的数据保留和/或耐久性的方法
-
Application No.: US13464895Application Date: 2012-05-04
-
Publication No.: US08531867B2Publication Date: 2013-09-10
- Inventor: Antonio R. Gallo
- Applicant: Antonio R. Gallo
- Applicant Address: US CA Sunnyvale
- Assignee: Adesto Technologies Corporation
- Current Assignee: Adesto Technologies Corporation
- Current Assignee Address: US CA Sunnyvale
- Main IPC: H01L29/08
- IPC: H01L29/08 ; G11C11/00
Abstract:
A memory element can include a memory layer formed between two electrodes; at least one element within the memory layer that is oxidizable in the presence of an electric field applied across the electrodes; and an inhibitor material incorporated into at least a portion of the memory layer that decreases an oxidation rate of the at least one element within the memory layer with respect to the memory layer alone. Methods of forming such a memory element are also disclosed.
Public/Granted literature
- US20130001503A1 CONDUCTIVE FILAMENT BASED MEMORY ELEMENTS AND METHODS WITH IMPROVED DATA RETENTION AND/OR ENDURANCE Public/Granted day:2013-01-03
Information query
IPC分类:
