A nonvolatile memory device includes a plurality of latches for storing data, a set/reset circuit for transferring data, stored in a selected latch of the latches, to a common node, a transmission circuit for transferring the data of the common node to a first sense node, a bit line transmission circuit for transferring the data of the first sense node to a bit line, a sense circuit for transferring the data of the first sense node to a second sense node, and a discharge circuit for changing a voltage level of the common node based on the data of the second sense node.