Invention Grant
- Patent Title: Magnetic memory
- Patent Title (中): 磁记忆
-
Application No.: US13426139Application Date: 2012-03-21
-
Publication No.: US08531875B2Publication Date: 2013-09-10
- Inventor: Satoshi Yanagi , Eiji Kitagawa , Masahiko Nakayama , Jyunichi Ozeki , Hisanori Aikawa , Naoharu Shimomura , Masatoshi Yoshikawa , Minoru Amano , Shigeki Takahashi , Hiroaki Yoda
- Applicant: Satoshi Yanagi , Eiji Kitagawa , Masahiko Nakayama , Jyunichi Ozeki , Hisanori Aikawa , Naoharu Shimomura , Masatoshi Yoshikawa , Minoru Amano , Shigeki Takahashi , Hiroaki Yoda
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01L29/82
- IPC: H01L29/82 ; G11C11/15
Abstract:
According to one embodiment, a magnetic memory includes at least one memory cell including a magnetoresistive element, and first and second electrodes. The element includes a first magnetic layer, a tunnel barrier layer, a second magnetic layer, and a third magnetic layer provided on the second magnetic layer and having a magnetization antiparallel to the magnetization direction of the second magnetic layer. A diameter of an upper surface of the first magnetic layer is smaller than that of a lower surface of the tunnel barrier layer. A diameter of a lower surface of the second magnetic layer is not more than that of an upper surface of the tunnel barrier layer.
Public/Granted literature
- US20120230091A1 MAGNETIC MEMORY Public/Granted day:2012-09-13
Information query
IPC分类:
