Invention Grant
US08531898B2 On-die termination circuit, data output buffer and semiconductor memory device
有权
片上终端电路，数据输出缓冲器和半导体存储器件
- Patent Title: On-die termination circuit, data output buffer and semiconductor memory device
- Patent Title (中): 片上终端电路，数据输出缓冲器和半导体存储器件
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Application No.: US13048219Application Date: 2011-03-15
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Publication No.: US08531898B2Publication Date: 2013-09-10
- Inventor: Ho-Seok Seol , Young-Soo Sohn , Dong-Min Kim , Jin-Il Lee , Kwang-Il Park , Seung-Jun Bae , Sang-Hyup Kwak
- Applicant: Ho-Seok Seol , Young-Soo Sohn , Dong-Min Kim , Jin-Il Lee , Kwang-Il Park , Seung-Jun Bae , Sang-Hyup Kwak
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Onello & Mello, LLP
- Priority: KR10-2010-0087872 20100908
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
An on-die termination circuit includes a termination resistor unit connected to an external pin, and a termination control unit connected to the termination resistor unit. The termination resistor unit provides termination impedance to a transmission line connected to the external pin. The termination control unit varies the termination impedance in response to a plurality of bits of strength code associated with a data rate.
Public/Granted literature
- US20110242916A1 ON-DIE TERMINATION CIRCUIT, DATA OUTPUT BUFFER AND SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2011-10-06
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