Invention Grant
US08531900B2 Techniques for increasing a lifetime of blocks of memory 有权
增加存储块寿命的技术

  • Patent Title: Techniques for increasing a lifetime of blocks of memory
  • Patent Title (中): 增加存储块寿命的技术
  • Application No.: US13572257
    Application Date: 2012-08-10
  • Publication No.: US08531900B2
    Publication Date: 2013-09-10
  • Inventor: Radoslav Danilak
  • Applicant: Radoslav Danilak
  • Applicant Address: US CA San Jose
  • Assignee: LSI Corporation
  • Current Assignee: LSI Corporation
  • Current Assignee Address: US CA San Jose
  • Agency: Patent Ventures
  • Agent Bennett Smith; Korbin Van Dyke
  • Main IPC: G11C7/00
  • IPC: G11C7/00
Techniques for increasing a lifetime of blocks of memory
Abstract:
Techniques are described for increasing a lifetime of blocks of memory. In operation, respective life expectancy scores for each of the blocks are calculated based at least in part on a respective number of times each of the blocks is respectively erased, and further based at least in part on at least one other factor that affects the lifetime of the blocks. An order to write and recycle the blocks is determined, based at least in part on at least some of the respective lifetime expectancy scores. A total amount of the blocks that are erased and written is minimized while lifetime expectancy score variation between the blocks is equalized.
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