Invention Grant
- Patent Title: Sensing circuit
- Patent Title (中): 感应电路
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Application No.: US13173795Application Date: 2011-06-30
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Publication No.: US08531902B2Publication Date: 2013-09-10
- Inventor: Seong-Ook Jung , Jisu Kim , Kyungho Ryu , Jung Pill Kim , Seung H. Kang
- Applicant: Seong-Ook Jung , Jisu Kim , Kyungho Ryu , Jung Pill Kim , Seung H. Kang
- Applicant Address: US CA San Diego KR Seoul
- Assignee: QUALCOMM Incorporated,Industry-Academic Cooperation Foundation, Yonsei University
- Current Assignee: QUALCOMM Incorporated,Industry-Academic Cooperation Foundation, Yonsei University
- Current Assignee Address: US CA San Diego KR Seoul
- Agent Sam Talpalatsky; Nicholas J. Pauley; Joseph Agusta
- Main IPC: G11C7/02
- IPC: G11C7/02
Abstract:
A circuit includes a degeneration p-channel metal-oxide-semiconductor (PMOS) transistor, a load PMOS transistor, and a clamp transistor configured to clamp a voltage applied to a resistance based memory element during a sensing operation. A gate of the load PMOS transistor is controlled by an output of a not-AND (NAND) circuit.
Public/Granted literature
- US20130003447A1 SENSING CIRCUIT Public/Granted day:2013-01-03
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