Invention Grant
- Patent Title: Memory apparatus and refresh method thereof
- Patent Title (中): 存储装置及其刷新方法
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Application No.: US13219624Application Date: 2011-08-27
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Publication No.: US08531905B2Publication Date: 2013-09-10
- Inventor: Sang Hyun Song
- Applicant: Sang Hyun Song
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Patent Ltd.
- Priority: KR10-2011-0040836 20110429
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
A memory apparatus includes a memory cell array comprising a plurality of memory cells connected with a plurality of bit lines and a plurality of word lines, a page buffer unit connected to the plurality of bit lines and latch data read from a memory cell selected from the plurality of memory cells, and a control unit configured to generate a refresh signal according to a prestored current status and provide the refresh signal to the page buffer unit in order to substantially prevent loss of the data latched by the page buffer unit.
Public/Granted literature
- US20120275239A1 MEMORY APPARATUS AND REFRESH METHOD THEROF Public/Granted day:2012-11-01
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