Invention Grant
US08531910B2 Input buffer circuit, semiconductor memory device and memory system
有权
输入缓冲电路,半导体存储器件和存储器系统
- Patent Title: Input buffer circuit, semiconductor memory device and memory system
- Patent Title (中): 输入缓冲电路,半导体存储器件和存储器系统
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Application No.: US13654723Application Date: 2012-10-18
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Publication No.: US08531910B2Publication Date: 2013-09-10
- Inventor: Hyoung-Seok Kim , Kwan-Yong Jin
- Applicant: Hyoung-Seok Kim , Kwan-Yong Jin
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2009-0072734 20090807
- Main IPC: G11C8/00
- IPC: G11C8/00

Abstract:
An input buffer circuit includes a logic unit, a clock enable buffer, and a clock buffer. The logic unit is configured to receive a clock signal and a clock enable signal, and to output a decision signal indicative of whether the clock signal is normally input, where the decision signal is activated when the clock signal is normally input. The clock enable buffer is configured to buffer the clock enable signal and to activate an internal clock enable signal, in response to an activation of the decision signal. The clock buffer is configured to buffer the clock signal and to output an internal clock signal, in response to an activation of the internal clock enable signal.
Public/Granted literature
- US20130039142A1 INPUT BUFFER CIRCUIT, SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM Public/Granted day:2013-02-14
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