Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US13005156Application Date: 2011-01-12
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Publication No.: US08533535B2Publication Date: 2013-09-10
- Inventor: Tae-youg Oh
- Applicant: Tae-youg Oh
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2010-0008598 20100129
- Main IPC: G06F11/00
- IPC: G06F11/00

Abstract:
A memory device and a method of controlling the memory device are provided, comprising: generating commands at a memory controller; counting a number of commands in response to a clock signal; storing the commands and the count numbers corresponding to the commands; transmitting to a memory device the commands, the count number of the commands, and data; receiving at the memory device the commands, the count number of the commands, and data sent from the memory controller; counting at the memory device the number of commands received in response to the clock signal; storing at the memory device the count number of commands received; and transmitting the count number of the commands received to the memory controller, wherein said transmitting the count number of the command to the memory controller is performed upon indication of an error condition.
Public/Granted literature
- US20110191640A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2011-08-04
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