Invention Grant
- Patent Title: Optical proximity correction for active region design layout
- Patent Title (中): 有源区域设计布局的光学邻近校正
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Application No.: US13233453Application Date: 2011-09-15
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Publication No.: US08533639B2Publication Date: 2013-09-10
- Inventor: Mei-Hsuan Lin , Chih-Chan Lu , Chih-Hsun Lin , Chih-Kang Chao , Ling-Sung Wang , Jen-Pan Wang
- Applicant: Mei-Hsuan Lin , Chih-Chan Lu , Chih-Hsun Lin , Chih-Kang Chao , Ling-Sung Wang , Jen-Pan Wang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G06F17/50
- IPC: G06F17/50 ; H01L25/00 ; H01L29/788 ; H01L27/11 ; H01L27/12 ; H03K19/00

Abstract:
The present disclosure provides an integrated circuit design method. In an example, a method includes receiving an integrated circuit design layout that includes an active region feature, a contact feature, and an isolation feature, wherein a portion of the active region feature is disposed between the contact feature and the isolation feature; determining whether a thickness of the portion of the active region feature disposed between the contact feature and the isolation feature is less than a threshold value; and modifying the integrated circuit design layout if the thickness is less than the threshold value, wherein the modifying includes adding a supplementary active region feature adjacent to the portion of the active region feature disposed between the contact feature and the isolation feature.
Public/Granted literature
- US20130069162A1 OPTICAL PROXIMITY CORRECTION FOR ACTIVE REGION DESIGN LAYOUT Public/Granted day:2013-03-21
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