Invention Grant
- Patent Title: Reducing narrow gate width effects in an integrated circuit design
- Patent Title (中): 降低集成电路设计中的窄栅宽效应
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Application No.: US13097537Application Date: 2011-04-29
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Publication No.: US08533645B2Publication Date: 2013-09-10
- Inventor: Edgardo F. Klass
- Applicant: Edgardo F. Klass
- Applicant Address: US CA Cupertino
- Assignee: Apple Inc.
- Current Assignee: Apple Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Meyertons, Hood, Kivlin, Kowert & Goetzel P.C.
- Agent Stephen J. Curran
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
A method for reducing narrow gate width effects in an integrated circuit includes finding the smallest transistor channel widths that are larger than the minimum width for the technology for library cells that produce logic blocks that meet timing constraints while using the least amount of power and have the smallest possible area. The method may include characterizing a device library while varying process, voltage and temperature parameters, and synthesizing an HDL representation of a functional logic block including cells from the device library. The method may also include determining whether timing, area, and power values of the functional logic block are within a predetermined range. In response to the timing, area, and power values not being within the predetermined range, iteratively increasing the channel width of at least a portion of the transistors of at least one of the cells in the device library.
Public/Granted literature
- US20120274357A1 Reducing Narrow Gate Width Effects in an Integrated Circuit Design Public/Granted day:2012-11-01
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