Invention Grant
- Patent Title: Physical vapor deposition with impedance matching network
- Patent Title (中): 物理气相沉积与阻抗匹配网络
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Application No.: US12389253Application Date: 2009-02-19
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Publication No.: US08540851B2Publication Date: 2013-09-24
- Inventor: Youming Li , Jeffrey Birkmeyer , Takamichi Fujii , Takayuki Naono , Yoshikazu Hishinuma
- Applicant: Youming Li , Jeffrey Birkmeyer , Takamichi Fujii , Takayuki Naono , Yoshikazu Hishinuma
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Fish & Richardson P.C.
- Main IPC: C23C14/34
- IPC: C23C14/34 ; C23C14/56

Abstract:
A method of physical vapor deposition includes applying a radio frequency signal to a cathode in a physical vapor deposition apparatus, wherein the cathode includes a sputtering target, electrically connecting a chuck in the physical vapor deposition apparatus to an impedance matching network, wherein the chuck supports a substrate, and wherein the impedance matching network includes at least one capacitor, and depositing material from the sputtering target onto the substrate.
Public/Granted literature
- US20100206718A1 PHYSICAL VAPOR DEPOSITION WITH IMPEDANCE MATCHING NETWORK Public/Granted day:2010-08-19
Information query
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