Invention Grant
US08541102B2 (Li, Na, K, Bi)(Nb, Ta)O3 based piezoelectric material and manufacturing method of the same
有权
（Li，Na，K，Bi）（Nb，Ta）O 3系压电材料及其制造方法
- Patent Title: (Li, Na, K, Bi)(Nb, Ta)O3 based piezoelectric material and manufacturing method of the same
- Patent Title (中): （Li，Na，K，Bi）（Nb，Ta）O 3系压电材料及其制造方法
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Application No.: US12495830Application Date: 2009-07-01
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Publication No.: US08541102B2Publication Date: 2013-09-24
- Inventor: Kazuyuki Kaigawa , Ritsu Tanaka , Hirofumi Yamaguchi
- Applicant: Kazuyuki Kaigawa , Ritsu Tanaka , Hirofumi Yamaguchi
- Applicant Address: JP Nagoya
- Assignee: NGK Insulators, Ltd.
- Current Assignee: NGK Insulators, Ltd.
- Current Assignee Address: JP Nagoya
- Agency: Burr & Brown
- Priority: JP2008-192944 20080728
- Main IPC: B32B5/16
- IPC: B32B5/16 ; H01L41/18
Abstract:
Piezoelectric materials having improved electrical properties, and manufacturing methods of the same, are provided. In (Li, Na, K, Bi)(Nb, Ta)O3 based piezoelectric materials, the surface microstructures of sintered bodies include microscopic grains having grain diameters of less than 5 μm, intermediate grains having grain diameters of 5 μm or more and less than 15 μm, and coarse grains having grain diameters of 15 μm or more and 100 μm or less.
Public/Granted literature
- US20100021728A1 (Li, Na, K, Bi)(Nb, Ta)O3 BASED PIEZOELECTRIC MATERIAL AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2010-01-28
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