Invention Grant
- Patent Title: Positive resist composition for immersion exposure and pattern forming method
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Application No.: US13057287Application Date: 2009-09-25
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Publication No.: US08541159B2Publication Date: 2013-09-24
- Inventor: Kei Yamamoto , Hiroshi Saegusa
- Applicant: Kei Yamamoto , Hiroshi Saegusa
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2008-249216 20080926
- International Application: PCT/JP2009/067192 WO 20090925
- International Announcement: WO2010/035894 WO 20100401
- Main IPC: G03F7/26
- IPC: G03F7/26

Abstract:
A positive resist composition for immersion exposure includes the following (A) to (D): (A) a resin capable of decomposing by an action of an acid to increase a solubility of the resin in an alkali developer; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a resin having at least either one of a fluorine atom and a silicon atom; and (D) a mixed solvent containing at least one kind of a solvent selected from the group consisting of solvents represented by any one of the following formulae (S1) to (S3) as defined in the specification, in which a total amount of the at least one kind of the solvent is from 3 to 20 mass % based on all solvents of the mixed solvent (D).
Public/Granted literature
- US20110143280A1 POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND PATTERN FORMING METHOD Public/Granted day:2011-06-16
Information query
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