Invention Grant
US08541248B2 Methods for fabricating planar heater structures for ejection devices
有权
用于制造喷射装置的平面加热器结构的方法
- Patent Title: Methods for fabricating planar heater structures for ejection devices
- Patent Title (中): 用于制造喷射装置的平面加热器结构的方法
-
Application No.: US13248298Application Date: 2011-09-29
-
Publication No.: US08541248B2Publication Date: 2013-09-24
- Inventor: Yimin Guan , Burton Joyner, II , Zach Reitmeier
- Applicant: Yimin Guan , Burton Joyner, II , Zach Reitmeier
- Applicant Address: US KY Lexington
- Assignee: Lexmark International, Inc.
- Current Assignee: Lexmark International, Inc.
- Current Assignee Address: US KY Lexington
- Main IPC: H01L21/02
- IPC: H01L21/02

Abstract:
Methods and apparatus teach a substrate wafer having a plurality of plugs configured there within. The method also includes depositing and patterning a layer of a second metallic material over the substrate wafer, providing a layer of a dielectric material of a predetermined thickness over the patterned layer of the second metallic material, and conducting chemical mechanical polishing of the layer of the dielectric material to form a planarized top surface while exposing the patterned layer of the second metallic material. The method further includes cleaning the planarized top surface, depositing and patterning a resistor film over the planarized top surface, depositing one or more blanket films over the patterned resistor film, and patterning and etching the one or more blanket films. Further disclosed are planar heater structures and additional methods for fabricating the planar heater structures.
Public/Granted literature
- US20130084662A1 METHODS FOR FABRICATING PLANAR HEATER STRUCTURES FOR EJECTION DEVICES Public/Granted day:2013-04-04
Information query
IPC分类: