Invention Grant
US08541267B2 FinFET transistor with high-voltage capability and CMOS-compatible method for fabricating the same
有权
具有高电压能力的FinFET晶体管和用于制造它的CMOS兼容方法
- Patent Title: FinFET transistor with high-voltage capability and CMOS-compatible method for fabricating the same
- Patent Title (中): 具有高电压能力的FinFET晶体管和用于制造它的CMOS兼容方法
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Application No.: US12933414Application Date: 2009-03-20
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Publication No.: US08541267B2Publication Date: 2013-09-24
- Inventor: Jan Sonsky , Anco Heringa
- Applicant: Jan Sonsky , Anco Heringa
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Priority: EP08102836 20080320
- International Application: PCT/IB2009/051183 WO 20090320
- International Announcement: WO2009/116015 WO 20090924
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84 ; H01L21/336 ; H01L29/66
Abstract:
The present invention relates to a method for fabricating a FinFET on a substrate. The method comprises providing a substrate with an active semiconductor layer on an insulator layer, and concurrently fabricating trench isolation regions in the active semiconductor layer for electrically isolating different active regions in the active semiconductor layer from each other, and trench gate-isolation regions in the active semiconductor layer for electrically isolating at least one gate region of the FinFET in the active semiconductor layer from a fin-shaped channel region of the FinFET in the active semiconductor layer.
Public/Granted literature
- US20110006369A1 FINFET TRANSISTOR WITH HIGH-VOLTAGE CAPABILITY AND CMOS-COMPATIBLE METHOD FOR FABRICATING THE SAME Public/Granted day:2011-01-13
Information query
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