Invention Grant
- Patent Title: Method for manufacturing thin film transistor
- Patent Title (中): 制造薄膜晶体管的方法
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Application No.: US13315430Application Date: 2011-12-09
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Publication No.: US08541268B2Publication Date: 2013-09-24
- Inventor: Chan-Chang Liao , Hsien-Kun Chiu , Wei-Pang Yen , Chao-Huan Hsu
- Applicant: Chan-Chang Liao , Hsien-Kun Chiu , Wei-Pang Yen , Chao-Huan Hsu
- Applicant Address: TW Taoyuan
- Assignee: Chunghwa Picture Tubes, Ltd.
- Current Assignee: Chunghwa Picture Tubes, Ltd.
- Current Assignee Address: TW Taoyuan
- Agency: CKC & Partners Co., Ltd.
- Priority: TW100124801A 20110713
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84
Abstract:
A thin film transistor and a method for manufacturing the same are provided. A top-gate thin film transistor is fabricated by a process using two gray-tone photomasks and a lift-off method. Therefore, the method can save cost of photomasks and processes comparing to a conventional fabrication method.
Public/Granted literature
- US20130015445A1 Thin Film Transistor and Method for Manufacturing the Same Public/Granted day:2013-01-17
Information query
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