Invention Grant
- Patent Title: Optoelectronic substrate and methods of making same
- Patent Title (中): 光电衬底及其制作方法
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Application No.: US13154510Application Date: 2011-06-07
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Publication No.: US08541290B2Publication Date: 2013-09-24
- Inventor: Fabrice Letertre , Bruce Faure
- Applicant: Fabrice Letertre , Bruce Faure
- Applicant Address: FR Bernin
- Assignee: Soitec
- Current Assignee: Soitec
- Current Assignee Address: FR Bernin
- Agency: Winston & Strawn LLP
- Priority: EP05290082 20050113
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
A method of fabricating a device by providing an auxiliary substrate having a metal nitride layer disposed thereon where the nitride layer has a nitrogen face and an opposite face and a dislocation density that is less than about 106, with the nitrogen face of the nitride layer facing the auxiliary substrate; depositing at least one epitaxial nitride layer on the exposed opposite face of the nitride layer of the structure; depositing a further metal layer over at least a portion of the epitaxial nitride layer(s); bonding a final substrate on the deposited metal layer; and removing the auxiliary substrate to form the device from the final substrate and deposited layers. Preferably, the device that is formed includes a LED or laser.
Public/Granted literature
- US20110237008A1 OPTOELECTRONIC SUBSTRATE AND METHODS OF MAKING SAME Public/Granted day:2011-09-29
Information query
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