Invention Grant
- Patent Title: Method of manufacturing semiconductor device, semiconductor device thus manufactured, and semiconductor manufacturing apparatus
- Patent Title (中): 制造半导体器件的方法,如此制造的半导体器件和半导体制造装置
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Application No.: US12801367Application Date: 2010-06-04
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Publication No.: US08541300B2Publication Date: 2013-09-24
- Inventor: Fumihiro Bekku
- Applicant: Fumihiro Bekku
- Applicant Address: JP Kawasaki-Shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-Shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2009-172477 20090723
- Main IPC: H01L23/498
- IPC: H01L23/498

Abstract:
A plurality of projections, respectively given later as cores of a plurality of external connection terminals, are formed first by selectively forming a curable resin layer over a protective insulating film; flat portions are then formed respectively on the top surfaces of the plurality of projections, by pressing a molding jig having a flat opposing surface onto the top surfaces of the plurality of projections, before the projections are cured; the plurality of projections are cured; and the plurality of external connection terminals, and the plurality of interconnects are formed, by selectively forming an electro-conductive film over the plurality of projections, the protective insulating film, and the plurality of electrode pads.
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Information query
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