Electronic device including a trench with a facet and a conductive structure therein and a process of forming the same

Invention Grant

US08541302B2 Electronic device including a trench with a facet and a conductive structure therein and a process of forming the same 有权

Title translation: 包括其中具有小面和导电结构的沟槽的电子设备及其形成工艺

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Patent Title: Electronic device including a trench with a facet and a conductive structure therein and a process of forming the same
Patent Title (中): 包括其中具有小面和导电结构的沟槽的电子设备及其形成工艺
Application No.: US13327454

Application Date: 2011-12-15
Publication No.: US08541302B2

Publication Date: 2013-09-24
Inventor: Gary H. Loechelt , Gordon M. Grivna
Applicant: Gary H. Loechelt , Gordon M. Grivna
Applicant Address: US AZ Phoenix
Assignee: Semiconductor Components Industries, LLC
Current Assignee: Semiconductor Components Industries, LLC
Current Assignee Address: US AZ Phoenix
Main IPC: H01L21/8222
IPC: H01L21/8222 ; H01L21/4763 ; H01L29/66

Electronic device including a trench with a facet and a conductive structure therein and a process of forming the same

Abstract:

An electronic device can include a transistor structure including a semiconductor layer overlying a substrate and a trench extending into the semiconductor layer having a tapered shape. In an embodiment, the tapered shape includes a facet. The transistor structure can include a source region and a drain region wherein different portions of the drain regions are disposed adjacent to the primary surface and within the trench. In another embodiment, different facets may be spaced apart from each other. Processes of forming the tapered etch can be tailored based on the needs or desires of a fabricator.

Abstract(Chinese):

电子器件可以包括晶体管结构，其包括覆盖衬底的半导体层和延伸到具有锥形形状的半导体层的沟槽。在一个实施例中，锥形形状包括小面。晶体管结构可以包括源极区域和漏极区域，其中漏极区域的不同部分邻近主要表面设置并且在沟槽内。在另一个实施例中，不同的刻面可以彼此间隔开。可以根据制造商的需要或期望来定制形成锥形蚀刻的工艺。

Public/Granted literature

US20130153988A1 ELECTRONIC DEVICE INCLUDING A TRENCH WITH A FACET AND A CONDUCTIVE STRUCTURE THEREIN AND A PROCESS OF FORMING THE SAME Public/Granted day:2013-06-20

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8222	......双极工艺