Production of TSV interconnection structures made up of an insulating contour and a conductive zone situated in the contour and disconnected from the contour

Invention Grant

US08541304B2 Production of TSV interconnection structures made up of an insulating contour and a conductive zone situated in the contour and disconnected from the contour 有权

Title translation: 生产TSV互连结构由绝缘轮廓和位于轮廓中并与轮廓断开的导电区组成

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Patent Title: Production of TSV interconnection structures made up of an insulating contour and a conductive zone situated in the contour and disconnected from the contour
Patent Title (中): 生产TSV互连结构由绝缘轮廓和位于轮廓中并与轮廓断开的导电区组成
Application No.: US12968125

Application Date: 2010-12-14
Publication No.: US08541304B2

Publication Date: 2013-09-24
Inventor: Gabriel Pares
Applicant: Gabriel Pares
Applicant Address: FR Paris
Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
Current Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
Current Assignee Address: FR Paris
Agency: Knobbe Martens Olson & Bear LLP
Priority: FR0958999 20091215
Main IPC: H01L21/28
IPC: H01L21/28

Production of TSV interconnection structures made up of an insulating contour and a conductive zone situated in the contour and disconnected from the contour

Abstract:

A method for producing an interconnection structure is disclosed. In one aspect, there is formation in a substrate of at least one trench forming a closed contour and at least one hole situated inside the closed contour, the trench and the hole being separated by a zone of the substrate. Furthermore, the trench is filled with a dielectric material and the hole is filled with a conducting material.

Abstract(Chinese):

公开了一种互连结构的制造方法。在一个方面，在形成封闭轮廓的至少一个沟槽的衬底中形成衬底，并且在闭合轮廓内部形成至少一个孔，沟槽和孔由衬底的区域分开。此外，沟槽填充有介电材料，并且该孔填充有导电材料。

Public/Granted literature

US20110143535A1 PRODUCTION OF TSV INTERCONNECTION STRUCTURES MADE UP OF AN INSULATING CONTOUR AND A CONDUCTIVE ZONE SITUATED IN THE CONTOUR AND DISCONNECTED FROM THE CONTOUR Public/Granted day:2011-06-16

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/28	....用H01L21/20至H01L21/268各组不包含的方法或设备在半导体材料上制造电极的